| PART |
Description |
Maker |
| SDR0602-181KL SDR0602-390KL SDR0602-820KL SDR0602- |
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 47 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 120 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 68 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 4.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 390 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 2.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 3.9 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Power Inductor; Series:SDR0602; Inductance:100uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:7MHz; Package/Case:470; Terminal Type:PCB Surface Mount; Core Material:Ferrite DQ; Current Rating:0.32A
|
Bourns, Inc.
BOURNS INC
|
| SRP1204-1R8M BOURNSINC-SRP1204-1R8M |
MAGNETICS - High Current Power Inductors 1 ELEMENT, 2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
| CF322513-330K CF322513-R33K CF322513-220K CF322513 |
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.47 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.68 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductors 4.7uH0.1 MultiLayer High Current 1 ELEMENT, 4.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductors 1uH0.1 MultiLayer High Current 1 ELEMENT, 1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 5.6 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 6.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 3.9 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 3.3 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
BOURNS INC
|
| CW201212-R33J CW201212-12NJ CW201212-R56J CW201212 |
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.012 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.91 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductor; Inductor Type:High Frequency; Inductance:13.3nH; Inductance Tolerance: /- 5 %; Current Rating:600mA; Series:CW201212; Package/Case:0805; Core Material:Alumina Ceramic; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Bourns, Inc.
BOURNS INC
|
| HX2019NLT H2005ANL H2006ANL H2008NL H2009NL H1197N |
100Base-TX VoIP Magnetics Modules
RoHS peak reflow temperature rating 245C
Power OVER Ethernet (PoE) Magnetics and (PoE ) Magnetics
|
Pulse A Technitrol Company
|
| BDP948 BDP950 Q62702-D1338 Q62702-D1336 |
From old datasheet system
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
SIEMENS A G
|
| BDP954 Q62702-D1340 BDP952 BDP956 Q62702-D1344 Q62 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MG600Q1US41 E002366 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| NTE29 NTE30 |
50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
Silicon Complementary Transistors High Power, High Current Switch
|
NTE[NTE Electronics]
|
| 2SD2414SM E001183 2SD2414 |
HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING/ POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| BC808-16 BC808-25 BC808-40 Q62702-C1689 BC807 BC80 |
From old datasheet system
SH2 Series, 7086 Group, Two ADC circuits, 6-ch 16-bit MTU2, 3-ch 16-bit MTU2S, Port Output Enable, 2-ch CMT, UBC, 5v IO, 15 mA IO TFP-100B; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PTQP0100KA-A
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 进步党硅晶体管自动对焦（自动对焦对于一般应用高集电极电流的高电流增益）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Fairchild Semiconductor, Corp.
|
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